© Skyarna Ltd 2012

 

Skyarna’s partners have worked for many years on developing high power, high efficiency, broad frequency range MMIC power amplifier design and packaging. The work has included 6 to 18 GHz GaAs MMIC, GaN hybrid and MMIC, and power combining. The GaN work has incorporated high efficiency and self-protection techniques. Current work is focused on high efficiency, broadband, GaAs and GaN, MMIC multi-octave power amplifiers operating to 18 GHz.

 

The innovative work of Skyarna designers contributed to the following published papers:

 

Power Amplifier publications

 

• “GaN Solid State Isolators - Design Considerations for a Self-Protected High Power Amplifier”, Jeff Powell, William McGenn, Johannes Benedikt, Paul Tasker, Trevor Martin and Michael Uren, 5th Space Agency – MOD Round Table on GaN component Technologies 2-3 Sept 2010

 

• “RF Waveform Method for the Determination of the Safe Operating Area of GaN HFET’s for Amplifiers Subjected to High Output VSWR”, William McGenn, Jeff Powell, Michael Uren, Johannes Benedikt, Paul Tasker, Proceedings of the 5th European Microwave Integrated Circuits Conference September 2010

 

• “Demonstration of Class J Operation for a GaAs X-Band High Efficiency Broadband Amplifier MMIC”, J. R. Powell, A. McLachlan, P. Tasker, J Bell, T Canning and S. C. Cripps, Submitted to IMS 2011  

 

• “X-Band GaN SPDT MMIC with over 25 Watt Linear Power Handling”, Jochem Janssen1, Marc van Heijningen, Keith P. Hilton, Jessica O. Maclean, David J. Wallis, Jeff Powell, Michael Uren, Trevor Martin and Frank van Vliet, Proceedings of the 3rd European Microwave Integrated Circuits Conference October 2008

 

• “Experimental gallium nitride microwave Doherty amplifier”, J. Lees, J. Benedikt, K.P. Hilton, J. Powell, R.S. Balmer, M.J. Uren, T. Martin and P.J. Tasker, ELECTRONICS LETTERS 10th November 2005 Vol. 41 No. 23

 

• “Single-Tone and Two-Tone Time-Domain Large Signal Characterization of GaN HFETs Operated in Class A”, Peter McGovem, David J. Williams, Paul J. Tasker, Johannes Benedikt, J. Powell, K. P. Hilton, R.S. Balmer, T. Martin, M. J. Uren, 2004 IEEE MTT-S Digest

 

• “Analysis of DC-RF Dispersion in AlGaN/GaN HFET’s Using Pulsed I-V and Time-Domain Waveform Measurements”, Peter McGovern, Johannes Benedikt, Paul J. Tasker, J. Powell, K. P. Hilton*, J. L. Glasper, R. S. Balmer, T. Martin M. J. Uren, 2005 IEEE MTT-S Digest

 

• “A 6-18 GHz Broadband High Power MMIC for EW Applications”, A R Barnes, M T Moore and M B Allenson, 1997 IEEE MTT-S Digest

 

• “A Compact 6 to 18 GHz Power Amplifier Module with 10W Output Power”, A R Barnes, M T Moore, M B Allenson and R G Davis, 1999 IEEE MTT-S Digest

 

• “Micro-Raman spectroscopy as a voltage probe in AlGaN/GaN heterostructure devices: Determination of buffer resistances” R.J.T. Simms, M.J. Uren, T. Martin, J. Powell, U. Forsberg, A. Lundskog, A. Kakanakova-Georgieva, E. Janzén, M. Kuball Solid-State Electronics 55 (2011) 5–7

 

GaN Receiver publication

 

• “GaN Robust Receiver MMIC at Xband - Process Optimisation and Circuit Results”, J. R. Powell, A. R. Barnes, T. Martin, D. G. Hayes, H. K. Johnson, A. G. Munday, K. P. Hilton and M. J. Uren, ARMMS Conference Apr. 2011